250GB 860 EVO M.2
Brand: Samsung
Available
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Description
Samsung 860 EVO solid state drive is the SSD to trust. Based on 3D VNAND flash, Samsung offers enhanced read/write performance, endurance and power management efficiency. With multiple form factors, the 860 EVO is ideal for mainstream PCs and laptops.
The SSD you trust
The newest edition to one of the world's top selling* SATA SSD series, the Samsung 860 EVO is specially designed to enhance performance of mainstream PCs and laptops. With the latest V-NAND technology, this fast and reliable SSD comes in a wide range of compatible form factors and capacities.
Enhanced performance
Speeds are consistent, even under heavy workloads and multi-tasking allowing for faster file transfer. The 860 EVO performs at sequential read speeds up to 550 MB/s* with Intelligent TurboWrite technology, and sequential write speeds up to 520 MB/s. The TurboWrite buffer size* is upgraded from 12 GB to 78 GB.
Boosted endurance
Up to 8x higher TBW (Terabytes Written)** than the 850 EVO. Feel secure storing and rendering large sized 4K videos and 3D data used by the latest applications.
Smart compatibility
Benefit from faster, more fluid communication with your host system. The refined ECC† algorithm and a new MJX controller generate higher speeds, and the improved queued trim enhances Linux compatibility.
Specifications
| Type | ||
| Series | SSD 860 EVO | |
| Usage Application | Client PCs | |
| Interface | SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface | |
| Storage | ||
| Capacity | 250 GB (1 GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise) |
|
| Key Features | ||
| Sequential Read Speed | Up to 550 MB/s Sequential Read * Performance may vary based on system hardware & configuration |
|
| Sequential Write Speed | Up to 520 MB/s Sequential Write * Performance may vary based on system hardware & configuration |
|
| Random Read Speed | Random Read (4KB, QD32): Up to 97,000 IOPS Random Read Random Read (4KB, QD1): Up to 10,000 IOPS Random Read * Performance may vary based on system hardware & configuration |
|
| Random Write Speed | Random Write (4KB, QD32): Up to 88,000 IOPS Random Write Random Write (4KB, QD1): Up to 42,000 IOPS Random Write * Performance may vary based on system hardware & configuration |
|
| Controller | Samsung MJX Controller | |
| NAND Type | Samsung V-NAND 3bit MLC | |
| Cache Memory | Samsung 250 GB Low Power DDR4 SDRAM | |
| Trim Support | Yes | |
| AES Encryption | AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive) | |
| S.M.A.R.T. Support | Yes | |
| GC (Garbage Collection) | Auto Garbage Collection Algorithm | |
| WWN Support | World Wide Name supported | |
| Device Sleep Mode Support | Yes | |
| Internal Storage | Yes | |
| General | ||
| Power Consumption (W) | *Average: 2.2 W *Maximum: 4.0 W (Burst mode) *Actual power consumption may vary depending on system hardware & configuration |
|
| Reliability (MTBF) | 1.5 Million Hours Reliability (MTBF) | |
| Environmental Specs | ||
| Operating Temperature | 0 - 70 ℃ Operating Temperature | |
| Shock | 1,500G & 0.5ms (Half sine) | |
| Form Factor | ||
| Product | M.2 SATA | |